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| Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 5.0 1.85 300 MAX. 1500 800 8 15 32 3.0 2.2 400 UNIT V V A A W V A V ns Ths 25 C IC = 5.0 A; IB = 1.25 A f= 16 kHz IF = 5 A ICsat = 5 A; f = 16kHz PINNING - SOT186A PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 123 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 8 15 4 6 5 32 150 150 UNIT V V A A A A A W C C Ths 25 C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 4.0 UNIT K/W K/W 1 Turn-off current. February 1999 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF STATIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL ICES ICES BVEBO Rbe VCEOsust VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current 2 CONDITIONS MIN. 7.5 800 0.85 4.2 - TYP. 13.5 25 0.94 7 5.7 1.85 MAX. 1.0 2.0 3.0 1.03 7.3 2.2 UNIT mA mA V V V V V VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C Emitter-base breakdown voltage IB = 600 mA Base-emitter resistance VEB = 6 V Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 5.0 A; IB = 1.25 A Base-emitter saturation voltage IC = 5.0 A; IB = 1.25 A DC current gain IC = 500 mA; VCE = 5 V IC = 5.0 A; VCE = 5 V Diode forward voltage IF = 5 A DYNAMIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time Anti-parallel diode forward recovery voltage Anti-parallel diode forward recovery time IF = 4 A; dIF/dt = 50 A/s VF = 5 V CONDITIONS ICsat = 5.0 A; IB1 = 1.0 A;(IB2 = -2.5 A) 2.75 300 19 500 3.75 400 s ns V ns TYP. MAX. UNIT ts tf Vfr tfr 2 Measured with half sine-wave voltage (curve tracer). February 1999 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ TRANSISTOR IC DIODE ICsat + 150 v nominal adjust for ICsat t Lc IB IB1 t 20us 26us 64us VCE IB2 D.U.T. IBend LB Cfb Rbe -VBB t Fig.1. Switching times waveforms (16 kHz). Fig.4. Switching times test circuit. ICsat 90 % IC 100 hFE VCE = 1V BU4508DF/X/Z Ths = 25 C Ths = 85 C 10 % tf ts IB IB1 t 10 t 1 0.01 - IB2 0.1 1 IC / A 10 Fig.2. Switching times definitions. Fig.5. High and low DC current gain. I F I F 100 hFE VCE = 5V BU4508DF/X/Z Ths = 25 C Ths = 85 C 10% t fr V F time 10 5V V F time V fr 1 0.01 0.1 1 IC / A 10 Fig.3. Definition of anti-parallel diode Vfr and tfr. Fig.6. High and low DC current gain. February 1999 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ 10 VCESAT \ V BU4508DF/X/Z 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating with heatsink compound Ths = 25 C Ths = 85 C 1 0.1 0.01 0.1 1 10 IC / A 100 0 20 40 60 80 Ths / C 100 120 140 Fig.7. Typical collector-emitter saturation voltage. Fig.10. Normalised power dissipation. PD% = 100PD/PD 25C Zth K/W VBESAT / V 1.2 BU4508DF/X/Z Ths = 25 C Ths = 85 C 10 BU4508AZ 1.1 1 0.5 0.2 0.1 0.05 1 0.1 0.9 IC = 5 A 0.02 0.8 0.01 P D 0 tp D= tp T t 1.0E+01 0.7 T 0.6 0 1 2 3 IB / A 4 0.001 1.0E-07 1.0E-05 1.0E-03 1.0E-01 t/s Fig.8. Typical base-emitter saturation voltage. Fig.11. Transient thermal impedance. 10 ts/tf/ us BU4508D ts/tf ICsat = 5 A Ths = 85 C Freq = 16 kHz 8 6 4 2 0 0 0.5 1 1.5 2 2.5 IB / A 3 Fig.9. Typical collector storage and fall time. IC =5 A; Tj = 85C; f = 16kHz February 1999 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 3.2 3.0 4.6 max 2.9 max Recesses (2x) 2.5 0.8 max. depth 2.8 6.4 15.8 19 max. max. seating plane 15.8 max 3 max. not tinned 3 2.5 13.5 min. 1 0.4 M 2 3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7 5.08 Fig.12. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1999 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1999 6 Rev 1.000 |
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